Metal film protection of CMOS wafers against KOH

Proceedings IEEE Thirteenth Annual International Conference on Micro Electro Mechanical Systems (Cat. No.00CH36308) Pub Date : 2000-01-23 DOI:10.1109/MEMSYS.2000.838587

U. Munch, O. Brand, O. Paul, H. Baltes, M. Bossel

引用次数: 6

Abstract

This paper reports a new protection for the front side of fully processed CMOS wafers against KOH etching solutions. The protection is based on thin TiW and Au films and is fully CMOS compatible. No mechanical fixture is required during the anisotropic etching step. Therefore, the new method is excellently suited for batch micromachining. Up to 100% of all chips on 6 inch wafers were fully operational after 4 hours KOH etching. The membrane yield after KOH etching was 100% and nearly 90% after the not yet optimized removal of the protection films. Thus, this protection fulfils the requirements of inexpensive and reliable sensor production.

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CMOS晶圆抗KOH的金属膜保护

本文报道了一种新的保护全加工CMOS晶圆正面免受KOH腐蚀溶液的保护。该保护基于薄TiW和Au薄膜，完全兼容CMOS。在各向异性蚀刻过程中不需要机械夹具。因此，该方法非常适合批量微加工。经过4小时的KOH蚀刻后，6英寸晶圆上的所有芯片都可以完全运行。KOH蚀刻后的膜收率为100%，未优化的保护膜去除后的膜收率接近90%。因此，这种保护满足了廉价和可靠的传感器生产的要求。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Proceedings IEEE Thirteenth Annual International Conference on Micro Electro Mechanical Systems (Cat. No.00CH36308)

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