T. Harada, A. Ueki, K. Tomita, K. Hashimoto, J. Shibata, H. Okamura, K. Yoshikawa, T. Iseki, M. Higashi, S. Maejima, K. Nomura, K. Goto, T. Shono, S. Muranaka, N. Torazawa, S. Hirao, M. Matsumoto, T. Sasaki, S. Matsumoto, S. Ogawa, M. Fujisawa, A. Ishii, M. Matsuura, T. Ueda
{"title":"Extremely Low Keff (1.9) Cu Interconnects with Air Gap Formed Using SiOC","authors":"T. Harada, A. Ueki, K. Tomita, K. Hashimoto, J. Shibata, H. Okamura, K. Yoshikawa, T. Iseki, M. Higashi, S. Maejima, K. Nomura, K. Goto, T. Shono, S. Muranaka, N. Torazawa, S. Hirao, M. Matsumoto, T. Sasaki, S. Matsumoto, S. Ogawa, M. Fujisawa, A. Ishii, M. Matsuura, T. Ueda","doi":"10.1109/IITC.2007.382364","DOIUrl":null,"url":null,"abstract":"Dual damascene Cu interconnects with Keff below 2.0 have been demonstrated for the first time. Air gaps between Cu lines were formed with a low K SiOC film in a carefully designed manner. CoWP cap layers were introduced to protect the Cu lines and to eliminate a dielectric liner layer. In addition, AGE (Air Gap Exclusion) was applied to solve crucial problems related to the air gaps. Keff of 1.9 was obtained at 65 nm design rule, which surpassed by far ITRS target (2.5~2.8) for hp 45. It was also confirmed that leakage current between lines was suppressed by the formation of the air gaps.","PeriodicalId":403602,"journal":{"name":"2007 IEEE International Interconnect Technology Conferencee","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE International Interconnect Technology Conferencee","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2007.382364","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 10
Abstract
Dual damascene Cu interconnects with Keff below 2.0 have been demonstrated for the first time. Air gaps between Cu lines were formed with a low K SiOC film in a carefully designed manner. CoWP cap layers were introduced to protect the Cu lines and to eliminate a dielectric liner layer. In addition, AGE (Air Gap Exclusion) was applied to solve crucial problems related to the air gaps. Keff of 1.9 was obtained at 65 nm design rule, which surpassed by far ITRS target (2.5~2.8) for hp 45. It was also confirmed that leakage current between lines was suppressed by the formation of the air gaps.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
