Experimental measurements of recombination lifetime in proton irradiated power devices

12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094) Pub Date : 2000-05-22 DOI:10.1109/ISPSD.2000.856826

S. Daliento, A. Sanseverino, P. Spirito, G. Busatto, J. Wiss

引用次数: 1

Abstract

Experimental measurements of the recombination lifetime profile induced by proton implantation processes are presented. Results show the capability of the differential technique to monitor lifetime engineering processes.

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质子辐照功率器件中复合寿命的实验测量

给出了质子注入过程诱导的复合寿命谱的实验测量结果。结果表明，差分技术具有监测全寿命工程过程的能力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)

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