Thermal noise modeling for short-channel MOSFETs

Abstract

In this work, a physics-based MOSFET drain thermal noise current model valid for all channel lengths was presented for the first time. The derived model was verified by extensive experimental noise and charge measurement of devices with channel lengths down to 0.18 /spl mu/m. Excellent agreement between measured and modeled drain thermal noise was obtained for the entire V/sub GS/ and V/sub DS/ bias regions.