M. Huang, S. W. Chang, M. Chen, Y. Oniki, H. C. Chen, W. Lee, C. H. Lin, M. A. Khaderbad, K. Y. Lee, Z. Chen, P. Tsai, L. T. Lin, M. Tsai, C. Hung, T. C. Huang, Y. Lin, Y. Yeo, S. Jang, H. Hwang, H. Wang, Carlos H. Díaz
{"title":"High performance In0.53Ga0.47As FinFETs fabricated on 300 mm Si substrate","authors":"M. Huang, S. W. Chang, M. Chen, Y. Oniki, H. C. Chen, W. Lee, C. H. Lin, M. A. Khaderbad, K. Y. Lee, Z. Chen, P. Tsai, L. T. Lin, M. Tsai, C. Hung, T. C. Huang, Y. Lin, Y. Yeo, S. Jang, H. Hwang, H. Wang, Carlos H. Díaz","doi":"10.1109/VLSIT.2016.7573361","DOIUrl":null,"url":null,"abstract":"In<sub>0.53</sub>Ga<sub>0.47</sub>As FinFETs are fabricated on 300 mm Si substrate. High device performance with good uniformity across the wafer are demonstrated (SS=78 mV/dec., I<sub>on</sub>/I<sub>off</sub>~10<sup>5</sup>, DIBL=48 mV/V, g<sub>m</sub>=1510 μS/μm, and I<sub>on</sub>=301 μA/μm at V<sub>ds</sub>=0.5V with L<sub>g</sub>=120 nm device). The extrinsic field effect mobility of 1731 cm<sup>2</sup>/V-s with EOT~0.9nm is extracted by split-CV. Devices fabricated on 300mm Si have shown similar performances in SS and I<sub>on</sub> when benchmarked with device fabricated on lattice-matched InP substrate. In addition, an I<sub>on</sub> of 44.1 μA per fin is observed on the fin-height of 70 nm and the fin-width of 25nm, which is among the highest values reported for In<sub>0.53</sub>Ga<sub>0.47</sub>As FinFETs to the best of our knowledge.","PeriodicalId":129300,"journal":{"name":"2016 IEEE Symposium on VLSI Technology","volume":"38 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"20","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE Symposium on VLSI Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2016.7573361","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 20
Abstract
In0.53Ga0.47As FinFETs are fabricated on 300 mm Si substrate. High device performance with good uniformity across the wafer are demonstrated (SS=78 mV/dec., Ion/Ioff~105, DIBL=48 mV/V, gm=1510 μS/μm, and Ion=301 μA/μm at Vds=0.5V with Lg=120 nm device). The extrinsic field effect mobility of 1731 cm2/V-s with EOT~0.9nm is extracted by split-CV. Devices fabricated on 300mm Si have shown similar performances in SS and Ion when benchmarked with device fabricated on lattice-matched InP substrate. In addition, an Ion of 44.1 μA per fin is observed on the fin-height of 70 nm and the fin-width of 25nm, which is among the highest values reported for In0.53Ga0.47As FinFETs to the best of our knowledge.
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