Reliability of planar and FinFET SONOS devices for NAND flash applications - Field enhancement vs. barrier engineering

T. Hsu, H. Lue, S. Lai, Y. King, K. Hsieh, Rich Liu, Chih-Yuan Lu
{"title":"Reliability of planar and FinFET SONOS devices for NAND flash applications - Field enhancement vs. barrier engineering","authors":"T. Hsu, H. Lue, S. Lai, Y. King, K. Hsieh, Rich Liu, Chih-Yuan Lu","doi":"10.1109/VTSA.2009.5159336","DOIUrl":null,"url":null,"abstract":"The reliability of sub-40nm SONOS NAND devices with various tunnel oxide thickness and FinFET structures are studied for future NAND Flash application. SONOS intrinsically has slow erase speed and high erase saturation for tunnel oxide ranging from 25 to 45 Å. Furthermore, the endurance degradation occurs very early at low P/E≪10, owing to the nature of electron de-trapping mechanism at tunnel oxide ≫ 20A. Thus planar SONOS is not suitable for NAND Flash applications. On the other hand, when SONOS is applied to FinFET structure, significantly faster erase speed is obtained, owing to the field enhancement effect. However, it is still hard to erase below the initial Vt. We conclude that barrier engineering, such as BE-SONOS is more efficient in providing faster erase speed at lower erase voltages without endurance degradation. We also estimated the large density (4Mb) array distribution of sub-40 nm SONOS and BE-SONOS devices, and found that the distribution width is quite insensitive to the tunnel oxide thickness. This suggests that for future scaled NAND devices the edge effect is more important in determining the P/E distribution than the tunnel oxide thickness variation.","PeriodicalId":309622,"journal":{"name":"2009 International Symposium on VLSI Technology, Systems, and Applications","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-04-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 International Symposium on VLSI Technology, Systems, and Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VTSA.2009.5159336","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9

Abstract

The reliability of sub-40nm SONOS NAND devices with various tunnel oxide thickness and FinFET structures are studied for future NAND Flash application. SONOS intrinsically has slow erase speed and high erase saturation for tunnel oxide ranging from 25 to 45 Å. Furthermore, the endurance degradation occurs very early at low P/E≪10, owing to the nature of electron de-trapping mechanism at tunnel oxide ≫ 20A. Thus planar SONOS is not suitable for NAND Flash applications. On the other hand, when SONOS is applied to FinFET structure, significantly faster erase speed is obtained, owing to the field enhancement effect. However, it is still hard to erase below the initial Vt. We conclude that barrier engineering, such as BE-SONOS is more efficient in providing faster erase speed at lower erase voltages without endurance degradation. We also estimated the large density (4Mb) array distribution of sub-40 nm SONOS and BE-SONOS devices, and found that the distribution width is quite insensitive to the tunnel oxide thickness. This suggests that for future scaled NAND devices the edge effect is more important in determining the P/E distribution than the tunnel oxide thickness variation.
用于NAND闪存应用的平面和FinFET SONOS器件的可靠性-场增强与屏障工程
研究了不同隧道氧化物厚度和FinFET结构的亚40nm SONOS NAND器件的可靠性,为未来NAND闪存的应用奠定了基础。SONOS本质上具有较慢的擦除速度和高擦除饱和度,隧道氧化物范围为25至45 Å。此外,在低P/E < 10时,由于隧道氧化物在< 20A >处的电子脱陷机制,耐久性下降发生得非常早。因此,平面SONOS不适合NAND闪存应用。另一方面,当SONOS应用于FinFET结构时,由于场增强效应,可以获得明显更快的擦除速度。然而,在初始电压下仍然很难擦除。我们得出结论,屏障工程,如BE-SONOS,在较低擦除电压下提供更快的擦除速度而不会降低耐用性。我们还估计了sub-40 nm SONOS和BE-SONOS器件的大密度(4Mb)阵列分布,发现分布宽度对隧道氧化物厚度非常不敏感。这表明,对于未来的缩放NAND器件,边缘效应在决定P/E分布方面比隧道氧化物厚度变化更重要。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信