Mask process matching using a model based data preparation solution

Brian Dillon, M. Saib, T. Figueiro, P. Petroni, C. Progler, P. Schiavone
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引用次数: 4

Abstract

Process matching is the ability to precisely reproduce the signature of a given fabrication process while using a different one. A process signature is typically described as systematic CD variation driven by feature geometry as a function of feature size, local density or distance to neighboring structures. The interest of performing process matching is usually to address differences in the mask fabrication process without altering the signature of the mask, which is already validated by OPC models and already used in production. The need for such process matching typically arises from the expansion of the production capacity within the same or different mask fabrication facilities, from the introduction of new, perhaps more advanced, equipment to deliver same process of record masks and/or from the re-alignment of processes which have altered over time. For state-of-the-art logic and memory mask processes, such matching requirements can be well below 2nm and are expected to reduce below 1nm in near future. In this paper, a data preparation solution for process matching is presented and discussed. Instead of adapting the physical process itself, a calibrated model is used to modify the data to be exposed by the source process in order to induce the results to match the one obtained while running the target process. This strategy consists in using the differences among measurements from the source and target processes, in the calibration of a single differential model. In this approach, no information other than the metrology results is required from either process. Experimental results were obtained by matching two different processes at Photronics. The standard deviation between both processes was of 2.4nm. After applying the process matching technique, the average absolute difference between the processes was reduced to 1.0nm with a standard deviation of 1.3nm. The methods used to achieve the result will be described along with implementation considerations, to help assess viability for model driven data solutions to play a role in future, critical mask matching efforts.
掩码过程匹配使用基于模型的数据准备解决方案
工艺匹配是在使用不同的制造工艺时精确复制给定制造工艺特征的能力。过程特征通常被描述为由特征几何驱动的系统CD变化,作为特征大小、局部密度或邻近结构距离的函数。执行工艺匹配的兴趣通常是在不改变掩模签名的情况下解决掩模制造过程中的差异,这已经通过OPC模型验证并已在生产中使用。这种工艺匹配的需求通常来自于相同或不同口罩制造设施内生产能力的扩大,来自于引入新的(可能更先进的)设备来提供相同的记录口罩工艺和/或来自于随着时间的推移而改变的工艺的重新校准。对于最先进的逻辑和内存掩模工艺,这种匹配要求可以远远低于2nm,并有望在不久的将来降至1nm以下。本文提出并讨论了一种过程匹配的数据准备方案。不调整物理过程本身,而是使用校准模型来修改源过程公开的数据,以便使结果与运行目标过程时获得的结果相匹配。该策略包括在单个差分模型的校准中使用源过程和目标过程测量之间的差异。在这种方法中,除了计量结果之外,任何过程都不需要其他信息。将两个不同的过程在光电器件上进行匹配,得到了实验结果。两种工艺的标准差为2.4nm。采用工艺匹配技术后,工艺间的平均绝对差降至1.0nm,标准差为1.3nm。将描述用于实现结果的方法以及实现考虑因素,以帮助评估模型驱动数据解决方案在未来关键掩模匹配工作中发挥作用的可行性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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