Additive Fabricated Compliant Interconnects: Design, Fabrication and Reliability Effects

T. Olatunji, D. Huitink
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Abstract

Electronics packaging development is greatly dependent on the magnitude of interconnect and on-chip stress that ultimately limits the reliability of electronic components. Thermomechanical strains occur because of the coefficient of thermal expansion mismatch from different conjoined materials being assembled to manufacture a device. To curb the effect of thermal expansion mismatch, studies have been done in integrating compliant structures between dies, solder balls, and substrates. Initial studies have enabled the design and manufacturing of these structures using a photolithography approach which involves an increased number of fabrication steps depending on the complexity of the structures. This current study involves the fabrication of these structures using a different approach, utilizing additive manufacturing that reduces the number of fabrication steps required to obtain compliant geometries, while also providing a platform for unique compliant structures. This paper discusses the method of fabrication and analyzes the properties and effects of these interconnect structures on a die. Structural finite element thermal cycling simulations between −40 to 125°C show about a 115% increase in the solder joint fatigue life. Additionally, fabricated test structures created directly on a PCB were experimentally characterized for compliance using a micro-indenter tester, showing a mechanical compliance range of 265.95 to 656.78 μ/N for selected design parameters to be integrated into a test vehicle.
增材制造兼容互连:设计、制造和可靠性影响
电子封装的发展很大程度上取决于互连和片上应力的大小,这最终限制了电子元件的可靠性。热机械应变的发生是由于热膨胀系数的不匹配,从不同的连接材料被组装来制造一个装置。为了抑制热膨胀失配的影响,在集成芯片、焊料球和衬底之间的柔性结构方面进行了研究。最初的研究已经能够使用光刻方法设计和制造这些结构,这涉及到根据结构的复杂性增加的制造步骤。目前的研究涉及使用不同的方法制造这些结构,利用增材制造减少了获得合规几何形状所需的制造步骤数量,同时也为独特的合规结构提供了平台。本文讨论了这些互连结构的制作方法,并分析了这些互连结构对模具的性能和影响。结构有限元热循环模拟表明,在- 40至125°C之间,焊点的疲劳寿命增加了115%。此外,利用微压头测试仪对直接在PCB上制作的测试结构进行了实验表征,结果表明,在所选择的设计参数集成到测试车辆中的机械顺应度范围为265.95至656.78 μ/N。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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