Characterization of Degradation of 65nm Node via Chains and Single Vias

X. Federspiel, S. Courtas, M. Grégoire
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Abstract

We used the resistance increase of single via to determine the intrinsic degradation kinetics of via in the temperature range 175 to 325C. The evolution of resistance in time follows a parabolic regime up to 325C, with activation energy of 1.0eV. It is worth noting that the evolution of degradation kinetics with temperature follows a simple Arrhenius equation. Thus, there is no evidence for an effect of thermo elastic stress on the degradation kinetics. We showed that the degradation mechanism in chains and single vias is similar. It is also noticeable that we found a bimodal distribution of resistance increase that is not visible from measurement of via chains. Together with making FA easier, this demonstrates the benefit of using single via to characterize stress voiding.
通过链和单孔降解65nm节点的表征
在175 ~ 325C的温度范围内,我们用单孔电阻的增加来测定通孔的固有降解动力学。当温度达到325C时,电阻随时间的变化遵循抛物线模式,活化能为1.0eV。值得注意的是,降解动力学随温度的演化遵循一个简单的阿伦尼乌斯方程。因此,没有证据表明热弹性应力对降解动力学的影响。我们发现在链孔和单孔中的降解机制是相似的。同样值得注意的是,我们发现电阻增加的双峰分布,这是不可见的测量通过链。加上使FA更容易,这证明了使用单通孔来表征应力空化的好处。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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