G. Fiorentino, S. Vollebregt, F. Tichelaar, R. Ishihara, P. Sarro
{"title":"3D solid-state supercapacitors obtained by ALD coating of high-density carbon nanotubes bundles","authors":"G. Fiorentino, S. Vollebregt, F. Tichelaar, R. Ishihara, P. Sarro","doi":"10.1109/MEMSYS.2014.6765646","DOIUrl":null,"url":null,"abstract":"A three-dimensional solid-state miniaturized supercapacitor based on double conformal coating of Multiwalled Carbon Nanotubes (MWCNTs) bundles is presented. Atomic Layer Deposition (ALD) is used to deposit Al<sub>2</sub>O<sub>3</sub> as dielectric layer and TiN as high aspect-ratio conformal counter-electrode on 2μm long MWCNTs bundles. The devices are realized using an IC wafer-scale manufacturing process and show a remarkable volumetric capacitance density value of 12mF/cm<sup>3</sup> with high reproducibility (≤0.3E-12F deviation). The small footprint (100μm<sup>2</sup> to 625μm<sup>2</sup>), a thickness of only 2μm, the extremely high capacitance density and the novel and easy-to-integrate fabrication process make it possible to realize high performance energy storage micro-devices.","PeriodicalId":312056,"journal":{"name":"2014 IEEE 27th International Conference on Micro Electro Mechanical Systems (MEMS)","volume":"148 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE 27th International Conference on Micro Electro Mechanical Systems (MEMS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MEMSYS.2014.6765646","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 10
Abstract
A three-dimensional solid-state miniaturized supercapacitor based on double conformal coating of Multiwalled Carbon Nanotubes (MWCNTs) bundles is presented. Atomic Layer Deposition (ALD) is used to deposit Al2O3 as dielectric layer and TiN as high aspect-ratio conformal counter-electrode on 2μm long MWCNTs bundles. The devices are realized using an IC wafer-scale manufacturing process and show a remarkable volumetric capacitance density value of 12mF/cm3 with high reproducibility (≤0.3E-12F deviation). The small footprint (100μm2 to 625μm2), a thickness of only 2μm, the extremely high capacitance density and the novel and easy-to-integrate fabrication process make it possible to realize high performance energy storage micro-devices.