Process influences on the microstructural and electrical properties of rapid thermal chemical vapor deposited polysilicon

Abstract

Single wafer CVD techniques have been gaining popularity in ULSI manufacturing of advanced technologies. Primarily driven by thermal budget reduction considerations, optimization of the electrical parameters of poly-silicon films is critical to maximizing their successful incorporation into the main stream production. In this work we look at the influences of deposition parameters such as temperature, and pressure, on grain structure, crystallographic texture, electrical resistivity, and electrical Tox depletion. We examine the influence of subsequent heat cycles on these fundamental film parameters