Tungsten Gate Replacement Process Optimization in 3D NAND Memory

T. Luoh, YuKai Huang, Chimin Chen, Yung-tai Hung, Ling-Wu Yang, Tahone Yang, Kuang-Chao Chen
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引用次数: 3

Abstract

The impact of fluorine [F] amount generated from conventional WCVD process and ALD WCVD process on SONOS charge-trapping 3D NAND memory are investigated. The damage degree of blocking oxide is an index for fluorine penetration through TiN/Al2O3 then further impacts the voltage break down (VBD) of ONO device characteristics. As compared to conventional WCVD process, ALD WCVD process with laminar 2D sequential growth can provide much better fill-in performance at word line, less fluorine trap at grain boundaries, damage-free of blocking oxide, minimal stress, and low resistance replacement gate to 3D NAND Flash.
3D NAND存储器中钨栅替换工艺优化
研究了常规WCVD工艺和ALD WCVD工艺产生的氟[F]量对SONOS电荷捕获3D NAND存储器的影响。阻氧化物的破坏程度是氟穿透TiN/Al2O3的指标,进而影响ONO器件特性的电压击穿(VBD)。与传统WCVD工艺相比,层流2D顺序生长的ALD WCVD工艺具有更好的字线填充性能、更少的晶界氟阱、无阻塞氧化物损伤、最小应力和低电阻替代栅极等优点。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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