{"title":"Laser de-bonding process development of glass substrate for Fan-out wafer level packaging","authors":"H. Hsiao, S. W. Ho, B. L. Lau","doi":"10.1109/EPTC.2016.7861439","DOIUrl":null,"url":null,"abstract":"Due to the demand of consumer electronics products for portable and multi-function, the development of microelectronic packaging forced to reduce the size and costs, to raise high performance. The trend causes the traditional wafer level packaging (WLP) integration great challenges: (1) when the chip size continued to scaling and solder balls became large for back-end package; it does not fit it inside the chip area for Semiconductor technological progress. (2) The chips become strong and I/O numbers increased make more difficult for WLP integration. If I/O numbers and the solder ball size decreased, it can product the I/O numbers and solder ball inside the chip area. However, the limited of the design rules for PCB assembly which has not reached manufacturing specifications for the front-end IC chips. And the I/O numbers and solder ball size will increase additional assembly costs. In recent years, the industry has developed Fan-out WLP can solve the above traditional WLP integration challenges. For Infineon in 2006 proposed the Fan-out WLP Technology [1-3]. In the Fan-out WLP integration process, multichip temporary de-bonding is the most important key technology. In recent times, a lot of studies for the de-bonding process to make wafer release, including chemical dissolution, thermal release device and laser ablation technology. There exist a number of approaches to the de-bonding of thinned device wafers: they may be released by exposure to chemical solvents delivered through perforations in the handler, by mechanical peeling from an edge-initiated separation point, or by heating the adhesive to the point where the silicon device wafer may be removed by sheering or peeling [4]. The de-bonding process for Fan-out WLP needs low-temperature and zero-force de-bonding. Therefore, this paper used the UV laser ablation de-bonding technology which process can use a glass substrate and can be handled at low temperature. The UV laser de-bonding process has been successfully achieved to apply in Fan-out WLP.","PeriodicalId":136525,"journal":{"name":"2016 IEEE 18th Electronics Packaging Technology Conference (EPTC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE 18th Electronics Packaging Technology Conference (EPTC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EPTC.2016.7861439","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
Due to the demand of consumer electronics products for portable and multi-function, the development of microelectronic packaging forced to reduce the size and costs, to raise high performance. The trend causes the traditional wafer level packaging (WLP) integration great challenges: (1) when the chip size continued to scaling and solder balls became large for back-end package; it does not fit it inside the chip area for Semiconductor technological progress. (2) The chips become strong and I/O numbers increased make more difficult for WLP integration. If I/O numbers and the solder ball size decreased, it can product the I/O numbers and solder ball inside the chip area. However, the limited of the design rules for PCB assembly which has not reached manufacturing specifications for the front-end IC chips. And the I/O numbers and solder ball size will increase additional assembly costs. In recent years, the industry has developed Fan-out WLP can solve the above traditional WLP integration challenges. For Infineon in 2006 proposed the Fan-out WLP Technology [1-3]. In the Fan-out WLP integration process, multichip temporary de-bonding is the most important key technology. In recent times, a lot of studies for the de-bonding process to make wafer release, including chemical dissolution, thermal release device and laser ablation technology. There exist a number of approaches to the de-bonding of thinned device wafers: they may be released by exposure to chemical solvents delivered through perforations in the handler, by mechanical peeling from an edge-initiated separation point, or by heating the adhesive to the point where the silicon device wafer may be removed by sheering or peeling [4]. The de-bonding process for Fan-out WLP needs low-temperature and zero-force de-bonding. Therefore, this paper used the UV laser ablation de-bonding technology which process can use a glass substrate and can be handled at low temperature. The UV laser de-bonding process has been successfully achieved to apply in Fan-out WLP.