A ReRAM-based physically unclonable function with bit error rate < 0.5% after 10 years at 125°C for 40nm embedded application

Y. Yoshimoto, Y. Katoh, S. Ogasahara, Z. Wei, K. Kouno
{"title":"A ReRAM-based physically unclonable function with bit error rate < 0.5% after 10 years at 125°C for 40nm embedded application","authors":"Y. Yoshimoto, Y. Katoh, S. Ogasahara, Z. Wei, K. Kouno","doi":"10.1109/VLSIT.2016.7573433","DOIUrl":null,"url":null,"abstract":"This paper presents a secure application-a physically unclonable function (PUF)-that uses the physical property of resistive random access memory (ReRAM). The proposed PUF-generating method and reproducing algorithm achieves highly reliable with bit error rate (BER) <; 0.5% and reproduction exceeding 1010 times at -40 to 125°C after 10 years at 125°C and high uniqueness as evidenced by passing NIST tests. Evaluations on 40nm ReRAM test chips have demonstrated the feasibility of a scaled-down ReRAM cell enhanced with PUF.","PeriodicalId":129300,"journal":{"name":"2016 IEEE Symposium on VLSI Technology","volume":"129 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"42","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE Symposium on VLSI Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2016.7573433","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 42

Abstract

This paper presents a secure application-a physically unclonable function (PUF)-that uses the physical property of resistive random access memory (ReRAM). The proposed PUF-generating method and reproducing algorithm achieves highly reliable with bit error rate (BER) <; 0.5% and reproduction exceeding 1010 times at -40 to 125°C after 10 years at 125°C and high uniqueness as evidenced by passing NIST tests. Evaluations on 40nm ReRAM test chips have demonstrated the feasibility of a scaled-down ReRAM cell enhanced with PUF.
基于reram的物理不可克隆功能,在125°C下10年后误码率< 0.5%,适用于40nm嵌入式应用
本文提出了一种利用电阻式随机存取存储器(ReRAM)物理特性的安全应用——物理不可克隆函数(PUF)。所提出的puf生成方法和再现算法在误码率<;0.5%,在125°C下10年后,在-40至125°C下繁殖超过1010次,通过NIST测试证明具有高度独特性。对40nm ReRAM测试芯片的评估已经证明了PUF增强的按比例缩小的ReRAM单元的可行性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信