N. Inoue, M. Tagami, F. Itoh, H. Yamamoto, T. Takeuchi, S. Saito, N. Furutake, M. Ueki, M. Tada, T. Suzuki, Y. Hayashi
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引用次数: 6
Abstract
The 45 nm-node interconnect with porous SiOCH-stacks of keff=2.9 is confirmed to have the practical reliability in PGBA and QFP. Adhesion strength of the via-ILD to the lower SiCN capping layer significantly impacts on the wire-bond reliability, but spreading the contact area of the bonding-wire within the fine-pitched bonding-pad suppresses the bonding failures in the low-k stack structures, irrespective of additional process of low-k curing or not. No failure was detected during reliability tests in PBGA package as well as QFP, confirming the practicality of the low keff interconnects for 45 nm-node ULSIs.