High performance, large-area, 1600 V / 150 A, 4H-SiC DMOSFET for robust high-power and high-temperature applications

2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) Pub Date : 2013-05-26 DOI:10.1109/ISPSD.2013.6694395

Lin Cheng, A. Agarwal, M. Schupbach, D. Gajewski, D. Lichtenwalner, V. Pala, S. Ryu, J. Richmond, J. Palmour, W. Ray, J. Schrock, A. Bilbao, S. Bayne, A. Lelis, C. Scozzie

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引用次数: 9

Abstract

In this paper, we report our recently developed 2^nd Generation, large-area (56 mm² with an active conducting area of 40 mm²) 4H-SiC DMOSFET, which can reliably block 1600 V with very low leakage current under a gate-bias (V_G) of 0 V at temperatures up to 200°C. The device also exhibits a low on-resistance (R_ON) of 12.4 mΩ at 150 A and V_G of 20 V. DC and dynamic switching characteristics of the SiC DMOSFET have also been compared with a commercially available 1200 V/ 200 A rated Si trench gate IGBT. The switching energy of the SiC DMOSFET at 600 V input voltage bus is > 4X lower than that of the Si IGBT at room-temperature and > 7X lower at 150°C. A comprehensive study on intrinsic reliability of this 2^nd generation SiC MOSFET has been performed to build consumer confidence and to achieve broad market adoption of this disruptive power switch technology.

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高性能，大面积，1600 V / 150 A, 4H-SiC DMOSFET，适用于高功率和高温应用

在本文中，我们报告了我们最近开发的第二代大面积(56 mm2，有效导电面积为40 mm2) 4H-SiC DMOSFET，它可以在高达200°C的温度下，在0 V的栅极偏置(VG)下以非常低的漏电流可靠地阻挡1600 V。该器件在150 a时的导通电阻(RON)为12.4 mΩ， VG为20 V。SiC DMOSFET的直流和动态开关特性也与市售的1200 V/ 200 a额定Si沟槽栅极IGBT进行了比较。SiC DMOSFET在600 V输入电压母线下的开关能量在室温下比Si IGBT低4倍以上，在150℃下比Si IGBT低7倍以上。对第二代SiC MOSFET的内在可靠性进行了全面研究，以建立消费者的信心，并实现这种颠覆性功率开关技术的广泛市场采用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)

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