A simultaneous switching noise analysis of a high speed memory module including the test environments and system-level models

Joon-Ho Choi, Kyung-Hwa Kim, Jung-Bae Lee, Taek-Soo Kim, J. Kong, Sang-Hoon Lee
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引用次数: 5

Abstract

As memory module products become more byte-wide and operate at higher speeds, more of the simultaneous switching noise (SSN) is observed. This paper presents SSN analysis results of high speed memory modules considering the power/ground planes and various interconnects of a test environment and computer system. Using the proposed model, highly accurate simulation results are obtained. Furthermore, we analyze the effect of SSN on the clock jitter and RAS Vil margin. The same model is also used to observe the effect of the decoupling capacitors on SSN. Based on our analysis, memory modules can be redesigned to increase the reliability.
高速存储器模块同时开关噪声分析,包括测试环境和系统级模型
随着存储模块产品变得更字节宽,并以更高的速度运行,更多的同时开关噪声(SSN)被观察到。本文给出了考虑测试环境和计算机系统的电源/地平面和各种互连的高速存储器模块的SSN分析结果。利用该模型,获得了高精度的仿真结果。此外,我们还分析了SSN对时钟抖动和RAS Vil裕度的影响。同样的模型也用于观察去耦电容对SSN的影响。根据我们的分析,可以重新设计内存模块以提高可靠性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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