Reducing FHDP plasma induced damage with silicon-rich oxide and oxynitride barrier layers

Abstract

Plasma damage resulting from fluorine doped High Density Plasma Deposition (FHDP) was investigated. A dielectric barrier layer placed either directly under the FHDP or directly over the gate was found to protect the gate oxide from plasma damage. The mechanism by which the dielectric layers counteract plasma damage from upper dielectric layers is investigated.