Statistics for matching

A. Pergoot, B. Graindourze, E. Janssens, J. Bastos, M. Steyaert, P. Kinget, R. Roovers, W. Sansen
{"title":"Statistics for matching","authors":"A. Pergoot, B. Graindourze, E. Janssens, J. Bastos, M. Steyaert, P. Kinget, R. Roovers, W. Sansen","doi":"10.1109/ICMTS.1995.513971","DOIUrl":null,"url":null,"abstract":"A statistical approach for evaluating the stochastic mismatching between two identically designed elements on the same chip is discussed. An approach to determine accurate matching parameters for a specific pair of devices and to obtain realistic worst case parameters for the area dependency model is presented. The approach is demonstrated by applying it to measured transistor threshold voltage mismatching data for a 0.7 /spl mu/m CMOS technology.","PeriodicalId":432935,"journal":{"name":"Proceedings International Conference on Microelectronic Test Structures","volume":"65 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-03-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"20","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings International Conference on Microelectronic Test Structures","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMTS.1995.513971","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 20

Abstract

A statistical approach for evaluating the stochastic mismatching between two identically designed elements on the same chip is discussed. An approach to determine accurate matching parameters for a specific pair of devices and to obtain realistic worst case parameters for the area dependency model is presented. The approach is demonstrated by applying it to measured transistor threshold voltage mismatching data for a 0.7 /spl mu/m CMOS technology.
匹配统计
讨论了一种评估同一芯片上两个相同设计元件之间随机失配的统计方法。提出了一种确定特定器件对精确匹配参数和获得区域依赖模型最坏情况参数的方法。通过将该方法应用于0.7 /spl mu/m CMOS技术的晶体管阈值电压不匹配数据的测量,验证了该方法的有效性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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