Electric and thermal transient effects in high power optical devices

G. Farkas, S. Haque, F. Wall, P. S. Martin, A. Poppe, Q. van Voorst Vader, G. Bognár
{"title":"Electric and thermal transient effects in high power optical devices","authors":"G. Farkas, S. Haque, F. Wall, P. S. Martin, A. Poppe, Q. van Voorst Vader, G. Bognár","doi":"10.1109/STHERM.2004.1291320","DOIUrl":null,"url":null,"abstract":"In case of opto-electronic devices the power applied on the device leaves in a parallel heat and light transport. For this reason the interpretation of R/sub th/ is not obvious. By studying electrical and thermal transients in high power LEDs this paper proposes a multi-domain \"compact\" model suitable for correct simulation of single devices as well as LED arrays in a board-level simulation environment. The thermal part of the model has been identified from structure functions extracted from measured thermal transients. Several measurements were carried out in a combined photometric/thermal measurement setup, which is proposed for the characterization of power LEDs. Transient simulation results compared to measured transients are also presented.","PeriodicalId":409730,"journal":{"name":"Twentieth Annual IEEE Semiconductor Thermal Measurement and Management Symposium (IEEE Cat. No.04CH37545)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-03-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"60","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Twentieth Annual IEEE Semiconductor Thermal Measurement and Management Symposium (IEEE Cat. No.04CH37545)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/STHERM.2004.1291320","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 60

Abstract

In case of opto-electronic devices the power applied on the device leaves in a parallel heat and light transport. For this reason the interpretation of R/sub th/ is not obvious. By studying electrical and thermal transients in high power LEDs this paper proposes a multi-domain "compact" model suitable for correct simulation of single devices as well as LED arrays in a board-level simulation environment. The thermal part of the model has been identified from structure functions extracted from measured thermal transients. Several measurements were carried out in a combined photometric/thermal measurement setup, which is proposed for the characterization of power LEDs. Transient simulation results compared to measured transients are also presented.
高功率光学器件中的电和热瞬态效应
在光电器件的情况下,施加在器件上的功率以平行的热和光传输离开。因此,对R/sub /的解释并不明显。本文通过研究大功率LED的电性和热瞬变,提出了一种适用于单板级仿真环境中对单个器件和LED阵列进行正确仿真的多域“紧凑”模型。从测量的热瞬变中提取的结构函数中识别出模型的热部分。在光度/热测量组合装置中进行了几项测量,该装置用于功率led的表征。并给出了瞬态仿真结果与实测结果的比较。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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