G. Farkas, S. Haque, F. Wall, P. S. Martin, A. Poppe, Q. van Voorst Vader, G. Bognár
{"title":"Electric and thermal transient effects in high power optical devices","authors":"G. Farkas, S. Haque, F. Wall, P. S. Martin, A. Poppe, Q. van Voorst Vader, G. Bognár","doi":"10.1109/STHERM.2004.1291320","DOIUrl":null,"url":null,"abstract":"In case of opto-electronic devices the power applied on the device leaves in a parallel heat and light transport. For this reason the interpretation of R/sub th/ is not obvious. By studying electrical and thermal transients in high power LEDs this paper proposes a multi-domain \"compact\" model suitable for correct simulation of single devices as well as LED arrays in a board-level simulation environment. The thermal part of the model has been identified from structure functions extracted from measured thermal transients. Several measurements were carried out in a combined photometric/thermal measurement setup, which is proposed for the characterization of power LEDs. Transient simulation results compared to measured transients are also presented.","PeriodicalId":409730,"journal":{"name":"Twentieth Annual IEEE Semiconductor Thermal Measurement and Management Symposium (IEEE Cat. No.04CH37545)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-03-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"60","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Twentieth Annual IEEE Semiconductor Thermal Measurement and Management Symposium (IEEE Cat. No.04CH37545)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/STHERM.2004.1291320","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 60
Abstract
In case of opto-electronic devices the power applied on the device leaves in a parallel heat and light transport. For this reason the interpretation of R/sub th/ is not obvious. By studying electrical and thermal transients in high power LEDs this paper proposes a multi-domain "compact" model suitable for correct simulation of single devices as well as LED arrays in a board-level simulation environment. The thermal part of the model has been identified from structure functions extracted from measured thermal transients. Several measurements were carried out in a combined photometric/thermal measurement setup, which is proposed for the characterization of power LEDs. Transient simulation results compared to measured transients are also presented.