J. Kawahara, A. Nakano, S. Saito, K. Kinoshita, T. Onodera, Y. Hayashi
{"title":"High performance Cu interconnects with low-k BCB-polymers by plasma-enhanced monomer-vapor polymerization (PE-MVP) method","authors":"J. Kawahara, A. Nakano, S. Saito, K. Kinoshita, T. Onodera, Y. Hayashi","doi":"10.1109/VLSIT.1999.799332","DOIUrl":null,"url":null,"abstract":"A new plasma-enhanced organic monomer-vapor polymerization (PE-MVP) method is developed for deposition of divinyl siloxane bis-benzocyclobutene (DVS-BCB) polymer films with low dielectric constant, k=2.7. The PE-MVP method eliminates polymer oxidation of DVS-BCB during polymerization, improving the thermal stability. By combining the MOCVD-Cu technique with the PE-MVP, narrow-pitch Cu/BCB damascene lines reveal a 35% reduction in the line capacitance compared to Cu/SiO/sub 2/ lines, while the interline leakage current is kept as low as 5/spl times/10/sup -9/ A/cm/sup 2/.","PeriodicalId":171010,"journal":{"name":"1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.1999.799332","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8
Abstract
A new plasma-enhanced organic monomer-vapor polymerization (PE-MVP) method is developed for deposition of divinyl siloxane bis-benzocyclobutene (DVS-BCB) polymer films with low dielectric constant, k=2.7. The PE-MVP method eliminates polymer oxidation of DVS-BCB during polymerization, improving the thermal stability. By combining the MOCVD-Cu technique with the PE-MVP, narrow-pitch Cu/BCB damascene lines reveal a 35% reduction in the line capacitance compared to Cu/SiO/sub 2/ lines, while the interline leakage current is kept as low as 5/spl times/10/sup -9/ A/cm/sup 2/.