Multiple quantum wells GaInNAs for ridge-wave-guide laser diodes

N. A. Abdul Manaf, M. Alias, S. Mitani, M. Yahya
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Abstract

The high demand for long wavelength lasers has led to the investigation of GaInNAs material. GaInNAs multiple-quantum-wells (MQWs) with different QW numbers have been studied for ridge waveguide (RWG) lasers. The emission wavelengths of the lasers are in the range of 1310 nm. Significant improvements of emission wavelength and output power were demonstrated with increasing QW numbers. We believed that that the number of QWs used in the devices is limited by the crystalline quality of the GaInNAs material. The emission wavelength is much more improved by increment of QW numbers. A smaller QW numbers are suitable for lower threshold current and higher differential quantum efficiency while a larger QW numbers can achieve a less output power. The higher threshold current is due to the approximately saturated threshold current density and the increments of the active volume. Further comparisons on the devices performance with variation of QW numbers will be report.
用于脊波导激光二极管的多量子阱gainna
对长波长激光器的高需求导致了对GaInNAs材料的研究。研究了不同量子阱数的GaInNAs多量子阱(mqw)在脊波导激光器中的应用。激光器的发射波长在1310nm范围内。随着量子波数的增加,发射波长和输出功率显著提高。我们认为,器件中使用的量子阱数量受到GaInNAs材料晶体质量的限制。随着量子波数的增加,发射波长明显提高。较小的QW数可以获得较低的阈值电流和较高的差分量子效率,而较大的QW数可以获得较小的输出功率。较高的阈值电流是由于近似饱和的阈值电流密度和有源体积的增加。对器件性能随QW数变化的进一步比较将被报告。
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