Comprehensive Design and Analysis of Fan-Out Wafer Level Package

Xiaowu Zhang, Y. Andriani, M. C. Jong, L. Bu, B. L. Lau, Simon Lim Siak Boon, Sharon Lim Pei Siang, Yong Han, Songlin Liu, Xiaobai Wang
{"title":"Comprehensive Design and Analysis of Fan-Out Wafer Level Package","authors":"Xiaowu Zhang, Y. Andriani, M. C. Jong, L. Bu, B. L. Lau, Simon Lim Siak Boon, Sharon Lim Pei Siang, Yong Han, Songlin Liu, Xiaobai Wang","doi":"10.1109/EPTC47984.2019.9026620","DOIUrl":null,"url":null,"abstract":"This paper presents an advanced modeling technology on wafer warpage after post mold curing (PMC) for the 12 inch mold-1st Fan-Out Wafer Level Packaging (FOWLP) with consideration of effects of viscoelastic model and chemical cure shrinkage, and layer design of the mold-1st packages. Results show that warpage of mold-1st FOWLP wafer predicted by the advanced modeling technology agrees well with the experimental result. A new guideline for FOWLP process flow is provided as well, which will be useful to the packaging industry. The advantages of the new guideline for FOWLP process flow are: (1) to eliminate wafer warpage correction process and save a lot of cost and time; (2) to serve as a basis for process selection to meet the trends and needs of a reliable fan-out wafer level package with lower wafer warpage during FOWLP wafer process; and (3) to be important to enhance survivability during wafer process and thin-wafer handling.","PeriodicalId":244618,"journal":{"name":"2019 IEEE 21st Electronics Packaging Technology Conference (EPTC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE 21st Electronics Packaging Technology Conference (EPTC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EPTC47984.2019.9026620","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

This paper presents an advanced modeling technology on wafer warpage after post mold curing (PMC) for the 12 inch mold-1st Fan-Out Wafer Level Packaging (FOWLP) with consideration of effects of viscoelastic model and chemical cure shrinkage, and layer design of the mold-1st packages. Results show that warpage of mold-1st FOWLP wafer predicted by the advanced modeling technology agrees well with the experimental result. A new guideline for FOWLP process flow is provided as well, which will be useful to the packaging industry. The advantages of the new guideline for FOWLP process flow are: (1) to eliminate wafer warpage correction process and save a lot of cost and time; (2) to serve as a basis for process selection to meet the trends and needs of a reliable fan-out wafer level package with lower wafer warpage during FOWLP wafer process; and (3) to be important to enhance survivability during wafer process and thin-wafer handling.
扇出晶圆级封装的综合设计与分析
本文提出了一种考虑粘弹性模型和化学固化收缩影响的12英寸模一级扇形圆片级封装模后固化(PMC)后圆片翘曲的先进建模技术,以及模一级封装层的设计。结果表明,采用先进的建模技术预测的第一模FOWLP晶片翘曲量与实验结果吻合较好。提出了一种新的FOWLP工艺流程指南,可为包装行业提供参考。新的FOWLP工艺流程指南的优点是:(1)消除了晶圆翘曲修正过程,节省了大量的成本和时间;(2)作为工艺选择的依据,以满足在FOWLP晶圆工艺过程中可靠的扇形圆片级封装的趋势和需求;(3)提高晶圆加工和薄晶圆处理过程中的生存能力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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