{"title":"Manufacturability comparison of thin oxynitride films","authors":"H. Preuss, J. Nakos, E. Adams, J. Burnham","doi":"10.1109/RTP.2005.1613694","DOIUrl":null,"url":null,"abstract":"Thin film nitridation has many applications in sub-0.13-micron line width semiconductor processing. We evaluated several single-wafer processing options capable of creating oxynitride films. Analytical results were obtained using ellipsometry, X-ray photoelectron spectroscopy (XPS), and TOFSIMS. These control methods are also compared to electrical performance data. Data are also reviewed with respect to manufacturing requirements such as tool-to-tool matching and process capability; including chamber to chamber, wafer to wafer and within wafer variability","PeriodicalId":253409,"journal":{"name":"2005 13th International Conference on Advanced Thermal Processing of Semiconductors","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2005 13th International Conference on Advanced Thermal Processing of Semiconductors","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RTP.2005.1613694","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Thin film nitridation has many applications in sub-0.13-micron line width semiconductor processing. We evaluated several single-wafer processing options capable of creating oxynitride films. Analytical results were obtained using ellipsometry, X-ray photoelectron spectroscopy (XPS), and TOFSIMS. These control methods are also compared to electrical performance data. Data are also reviewed with respect to manufacturing requirements such as tool-to-tool matching and process capability; including chamber to chamber, wafer to wafer and within wafer variability