Three dimensional PVD virtual reactor for VLSI metallization

Abstract

A three dimensional Physical Vapor Deposition (PVD) virtual reactor is presented which uses 3-d particle flux data generated by equipment level models in order to simulate 3-d metal film profiles for VLSI scale features. A calibration methodology which links the 3-d virtual reactor with a computationally efficient "3-2d" simulator is demonstrated, and an accuracy criteria which specifies when the full 3-d code is more accurate than its 3-2d counterpart is calculated. Experimental Ti/Al depositions were performed for 3-d structures, and the corresponding SEM cross sections are compared to simulated data.