Evidence for Pb center-hydrogen complexes after subjecting PMOS devices to NBTI stress - A combined DCIV/SDR study

Abstract

We study deep level defects at the Si/SiO2 interface of 30nm and 5nm SiO2 PMOS devices after negative bias temperature stress (NBTS). Electrical characterization using the direct-current current-voltage (DCIV) technique reveals two defects with different energy levels, recovery and degradation dynamics. To investigate their micro-physical nature, we perform spin dependent recombination (SDR). Besides conventional Pb centers we also find evidence for Pb center-hydrogen complexes.