Characteristic Analysis of Ga-Sn-O TFT Subjected to UV Annealing Treatment

Abstract

We succeeded in forming a Ga-Sn-O (GTO) film for a thin film transistor (TFT) by using a RF magnetron sputtering at room temperature and applying UV annealing (254 nm) treatment. The field effect mobility is 3.53 cm2/V · S. This result suggests the possibility of a rare metal free amorphous metal oxide semiconductor.