L. Chu, T. Lin, C. H. Lee, L. T. Tung, W. Lee, R. Chu, C. C. Chang, M. Hong, J. Kwo
{"title":"Metal-oxide-semiconductor devices with UHV-Ga2O3(Gd2O3) on Ge(100)","authors":"L. Chu, T. Lin, C. H. Lee, L. T. Tung, W. Lee, R. Chu, C. C. Chang, M. Hong, J. Kwo","doi":"10.1109/VTSA.2009.5159328","DOIUrl":null,"url":null,"abstract":"Ultra-high vacuum (UHV)-deposited high Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>) was proved to passivate Ge effectively, as evidenced by comprehensive investigations including structural, chemical, and electrical analyses. The Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>)/Ge interface is revealed to be abrupt even being subjected to a 500°C anneal, a high κ value of 14.5, a low leakage current density of ∼10<inf>−9</inf>A/cm<sup>2</sup> with a Fowler-Nordheim tunneling behavior, and well-behaved C-V characteristics are achieved. Furthermore, Ge self-aligned pMOSFETs with Al<inf>2</inf>O<inf>3</inf>/ Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>) as the gate dielectrics have demonstrated a high drain current and a peak transconductance up to 252mA/mm and 143mS/mm, respectively, of 1µm-gate length.","PeriodicalId":309622,"journal":{"name":"2009 International Symposium on VLSI Technology, Systems, and Applications","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2009-04-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 International Symposium on VLSI Technology, Systems, and Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VTSA.2009.5159328","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract
Ultra-high vacuum (UHV)-deposited high Ga2O3(Gd2O3) was proved to passivate Ge effectively, as evidenced by comprehensive investigations including structural, chemical, and electrical analyses. The Ga2O3(Gd2O3)/Ge interface is revealed to be abrupt even being subjected to a 500°C anneal, a high κ value of 14.5, a low leakage current density of ∼10−9A/cm2 with a Fowler-Nordheim tunneling behavior, and well-behaved C-V characteristics are achieved. Furthermore, Ge self-aligned pMOSFETs with Al2O3/ Ga2O3(Gd2O3) as the gate dielectrics have demonstrated a high drain current and a peak transconductance up to 252mA/mm and 143mS/mm, respectively, of 1µm-gate length.
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