The investigation of galvanic corrosion in post-copper-CMP cleaning

H.C. Chen, M.S. Yang, J.Y. Wu, V. Wang
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引用次数: 4

Abstract

The characteristics of galvanic corrosion in post-copper CMP cleaning are investigated. This type of corrosion occurs when CMP process completed, due to the heating lamp in SRD step. Particularly, it occurs only in device wafer, but not in structural test wafer. The corrosion behavior with light was identified. It occurs not only in integrated cleaner, but also in stand alone brush type cleaner. Copper lines were bridged after corrosion. The corrosion by-product can be removed by means of solvent cleaning. The mechanism and the prevention of this type of light-induced corrosion are reported in this paper.
铜- cmp清洗后电偶腐蚀的研究
研究了铜后CMP清洗过程中电偶腐蚀的特点。由于SRD步骤中的加热灯,这种类型的腐蚀发生在CMP过程完成时。特别是,它只发生在器件晶片中,而不发生在结构测试晶片中。确定了材料的光腐蚀行为。它不仅发生在整体式清洗机中,也发生在独立刷式清洗机中。铜线腐蚀后桥接。腐蚀副产物可以用溶剂清洗的方法去除。本文报道了这种光致腐蚀的机理和预防措施。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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