Via distribution model for yield estimation

T. Uezono, K. Okada, K. Masu
{"title":"Via distribution model for yield estimation","authors":"T. Uezono, K. Okada, K. Masu","doi":"10.1109/ISQED.2006.144","DOIUrl":null,"url":null,"abstract":"In this paper, we propose a via distribution model for yield estimation. The proposed model expresses a relationship between the number of vias and wire length. We can also estimate the total number of vias in a circuit, which is derived from the via distribution and the wire-length distribution. The via distribution is modeled as a function of track utilization, and the wire-length distribution can be derived from a gate-level netlist and layout area. We extract model parameters from the commercial chips designed for 0.18-mum and 0.13-mum CMOS processes, and demonstrate yield degradation caused by vias","PeriodicalId":138839,"journal":{"name":"7th International Symposium on Quality Electronic Design (ISQED'06)","volume":"54 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"7th International Symposium on Quality Electronic Design (ISQED'06)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISQED.2006.144","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6

Abstract

In this paper, we propose a via distribution model for yield estimation. The proposed model expresses a relationship between the number of vias and wire length. We can also estimate the total number of vias in a circuit, which is derived from the via distribution and the wire-length distribution. The via distribution is modeled as a function of track utilization, and the wire-length distribution can be derived from a gate-level netlist and layout area. We extract model parameters from the commercial chips designed for 0.18-mum and 0.13-mum CMOS processes, and demonstrate yield degradation caused by vias
通过分布模型进行产量估计
在本文中,我们提出了一个通过分布模型来估计产量。所提出的模型表达了过孔数与导线长度之间的关系。我们还可以估计电路中的通孔总数,这是由通孔分布和导线长度分布得出的。通道分布是轨道利用率的函数,线长分布可以从门级网表和布局区域导出。我们从为0.18和0.13 μ m CMOS工艺设计的商用芯片中提取模型参数,并证明了过孔导致的良率下降
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