Advanced Gate-stack Architecture For Low-voltage Dual-workfunction CMOS Technologies With Shallow Trench Isolation

Abstract

In this work we present the advanced gate-stack architecture EXTIGATE (Extended Trench Isolation GAte TEchnology) which solves major problems associated with n+/p+ dual workfunction gate technology and shallow-trench-isolation (STI). These achievements are realized without an increase in process complexity. Furthermore, the process window is enlarged leading to a robust low-voltage dual-workfunction STI-CMOS process.