Defect analysis in power mode control logic of low-power SRAMs

L. Zordan, A. Bosio, L. Dilillo, P. Girard, A. Todri, A. Virazel, N. Badereddine
{"title":"Defect analysis in power mode control logic of low-power SRAMs","authors":"L. Zordan, A. Bosio, L. Dilillo, P. Girard, A. Todri, A. Virazel, N. Badereddine","doi":"10.1109/ETS.2012.6233033","DOIUrl":null,"url":null,"abstract":"Summary form only given. Low-power SRAMs embed power gating mechanisms for reducing static power consumption. Power gating is applied in SRAMs using power switches for controlling the supply voltage applied to the various memory blocks (array, decoders, I/O logic, etc.). This paper provides a detailed analysis based on electrical simulations to describe the impacts of resistive-open defects on the power mode control logic, which generates control signals of power switches.","PeriodicalId":429839,"journal":{"name":"2012 17th IEEE European Test Symposium (ETS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 17th IEEE European Test Symposium (ETS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ETS.2012.6233033","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

Abstract

Summary form only given. Low-power SRAMs embed power gating mechanisms for reducing static power consumption. Power gating is applied in SRAMs using power switches for controlling the supply voltage applied to the various memory blocks (array, decoders, I/O logic, etc.). This paper provides a detailed analysis based on electrical simulations to describe the impacts of resistive-open defects on the power mode control logic, which generates control signals of power switches.
低功耗sram功率模式控制逻辑缺陷分析
只提供摘要形式。低功耗sram嵌入功率门控机制,以减少静态功耗。功率门控应用于sram中,使用功率开关来控制施加到各种存储块(阵列,解码器,I/O逻辑等)的电源电压。本文基于电学仿真详细分析了电阻性开路缺陷对产生功率开关控制信号的功率模式控制逻辑的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信