Microstructure evolution of electroplated Cu during room temperature transient

M. Gribelyuk, S. Malhotra, P. Locke, P. Dehaven, J. Fluegel, C. Parks, A. Simon, R. Murphy
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引用次数: 1

Abstract

Previously the Cu resistance transient time was found to be dependent on the electroplating current. It was shown that longer transient times were correlated with a greater incorporation of plating impurities for the bath chemistry used in this study. The present work shows that the grain growth that occurs during the resistance transient is initiated by the formation of abnormally large grains, where the transformed structure reveals strong /spl Sigma/3 type twinning. The increase in the fraction of twin grain boundaries with transient time is quantified, and a comparison of the time dependencies of resistivity and the grain size shows that the Mayadas-Shatzkes model can qualitatively describe grain boundary resistivity. X-ray analysis revealed that the structure is strongly {111} textured and the contribution of {200} texture increases during transformation. Atomic Force Microscopy (AFM) and imaging with the secondary electron in-lens detector showed that surface morphology of Cu structures varies across the film and is dependent on the plating current.
室温瞬态电镀Cu的微观组织演变
以前发现铜电阻瞬态时间依赖于电镀电流。结果表明,较长的瞬态时间与本研究中使用的镀液化学中较大的电镀杂质掺入有关。目前的研究表明,在电阻瞬态期间,晶粒的生长是由异常大晶粒的形成引起的,其中转变的结构显示出强烈的/spl Sigma/3型孪晶。对双晶界电阻率随瞬态时间的增加进行了量化,并对电阻率与晶粒尺寸的时间依赖性进行了比较,结果表明Mayadas-Shatzkes模型可以定性地描述晶界电阻率。x射线分析表明,该组织具有较强的{111}织构,{200}织构的贡献在相变过程中增加。原子力显微镜(AFM)和二次电子透镜内探测器成像表明,Cu结构的表面形貌随镀电流的变化而变化。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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