{"title":"Evaluation of DC and AC performance of junctionless MOSFETs in the presence of variability","authors":"Xin Qian, Yinglin Yang, Zhiwei Zhu, Shi-Li Zhang, Dongping Wu","doi":"10.1109/ICICDT.2011.5783243","DOIUrl":null,"url":null,"abstract":"In this paper, DC and AC performance of junctionless MOSFETs are extensively examined. A comparison is made between double-gate junctionless MOSFETs and conventional inversion-mode MOSFETs with an emphasis on the variability in performance. Despite clear benefits by eliminating junctions and related junction variabilities, junctionless MOSFETs are found to require double- or multi-gate in order to be fully turned off. They are also significantly more sensitive to variations of channel thickness and channel doping concentration. Though junctionless MOSFETs demonstrate lower driving current and transconductance, they exhibit significantly lower gate capacitances at saturation region and slower degradation of transconductance over gate overdrive.","PeriodicalId":402000,"journal":{"name":"2011 IEEE International Conference on IC Design & Technology","volume":"123 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-05-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"16","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 IEEE International Conference on IC Design & Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICICDT.2011.5783243","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 16
Abstract
In this paper, DC and AC performance of junctionless MOSFETs are extensively examined. A comparison is made between double-gate junctionless MOSFETs and conventional inversion-mode MOSFETs with an emphasis on the variability in performance. Despite clear benefits by eliminating junctions and related junction variabilities, junctionless MOSFETs are found to require double- or multi-gate in order to be fully turned off. They are also significantly more sensitive to variations of channel thickness and channel doping concentration. Though junctionless MOSFETs demonstrate lower driving current and transconductance, they exhibit significantly lower gate capacitances at saturation region and slower degradation of transconductance over gate overdrive.