Evaluation of DC and AC performance of junctionless MOSFETs in the presence of variability

Xin Qian, Yinglin Yang, Zhiwei Zhu, Shi-Li Zhang, Dongping Wu
{"title":"Evaluation of DC and AC performance of junctionless MOSFETs in the presence of variability","authors":"Xin Qian, Yinglin Yang, Zhiwei Zhu, Shi-Li Zhang, Dongping Wu","doi":"10.1109/ICICDT.2011.5783243","DOIUrl":null,"url":null,"abstract":"In this paper, DC and AC performance of junctionless MOSFETs are extensively examined. A comparison is made between double-gate junctionless MOSFETs and conventional inversion-mode MOSFETs with an emphasis on the variability in performance. Despite clear benefits by eliminating junctions and related junction variabilities, junctionless MOSFETs are found to require double- or multi-gate in order to be fully turned off. They are also significantly more sensitive to variations of channel thickness and channel doping concentration. Though junctionless MOSFETs demonstrate lower driving current and transconductance, they exhibit significantly lower gate capacitances at saturation region and slower degradation of transconductance over gate overdrive.","PeriodicalId":402000,"journal":{"name":"2011 IEEE International Conference on IC Design & Technology","volume":"123 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-05-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"16","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 IEEE International Conference on IC Design & Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICICDT.2011.5783243","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 16

Abstract

In this paper, DC and AC performance of junctionless MOSFETs are extensively examined. A comparison is made between double-gate junctionless MOSFETs and conventional inversion-mode MOSFETs with an emphasis on the variability in performance. Despite clear benefits by eliminating junctions and related junction variabilities, junctionless MOSFETs are found to require double- or multi-gate in order to be fully turned off. They are also significantly more sensitive to variations of channel thickness and channel doping concentration. Though junctionless MOSFETs demonstrate lower driving current and transconductance, they exhibit significantly lower gate capacitances at saturation region and slower degradation of transconductance over gate overdrive.
可变性下无结mosfet的直流和交流性能评估
本文对无结mosfet的直流和交流性能进行了广泛的研究。比较了双栅无结mosfet与传统反转模式mosfet的性能差异。尽管通过消除结和相关结变化有明显的好处,但发现无结mosfet需要双栅极或多栅极才能完全关断。它们对通道厚度和通道掺杂浓度的变化也明显更敏感。虽然无结mosfet表现出较低的驱动电流和跨导性,但它们在饱和区表现出明显较低的栅极电容,并且在栅极过度驱动时跨导性的退化较慢。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信