{"title":"Stand-by current in PD-SOI pseudo-nMOS circuits","authors":"J. Sivagnaname, R. B. Brown","doi":"10.1109/SOI.2003.1242912","DOIUrl":null,"url":null,"abstract":"In this paper, we compare the stand-by leakage power of controlled-load pseudo-nMOS circuits to that of conventional CMOS and MTCMOS in a 0.13/spl mu/m dual V/sub T/partially-depleted SOI tehnology.","PeriodicalId":329294,"journal":{"name":"2003 IEEE International Conference on SOI","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2003 IEEE International Conference on SOI","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.2003.1242912","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
In this paper, we compare the stand-by leakage power of controlled-load pseudo-nMOS circuits to that of conventional CMOS and MTCMOS in a 0.13/spl mu/m dual V/sub T/partially-depleted SOI tehnology.
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