Over 10 kV vertical GaN p-n junction diodes with high-K/low-K compound dielectric structure

Jiangfeng Du, Zhenchao Li, Dong Liu, Zhiyuan Bai, Qi Yu
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引用次数: 1

Abstract

In this letter, a vertical GaN p-n junction diode with high-K/low-K compound dielectric structure (GaN CD-VGD) is proposed. The high-K/low-K compound dielectric structure consists of a layer of high dielectric constant and multilayer dielectric layers which have a lower dielectric constant, and these compound dielectric layers formed along the current flow direction. Compared with a conventional p-n diode, the edge electric field will be suppressed due to the effects of high-K passivation. And a new electric field peak will be introduced in the p-n diodes, because of a discontinuity of electrical field at the interface of high-K and low-K layer. Therefore the distribution of electric field in p-n diodes will become more uniform and an enhancement of breakdown voltage can be achieved. A best trade-off breakdown voltage (BV) and on-resistance (Ron) have been obtained by optimizing device parameters including dielectric layer situation, length and width. Numerical simulation demonstrate that GaN CD-VGD with a BV of 10650V and a Ron of 5.83 mΩ-cm2, resulting in a figure-of-merit (VB2/Ron) of 19 GW/cm2.
具有高k /低k复合介电结构的10kv以上垂直GaN p-n结二极管
本文提出了一种具有高k /低k复合介电结构的垂直GaN p-n结二极管(GaN CD-VGD)。高k /低k复合介电结构由一层高介电常数和多层低介电常数的复合介电层组成,这些复合介电层沿电流流动方向形成。与传统的p-n二极管相比,由于高k钝化效应,边缘电场将被抑制。由于高钾层和低钾层界面处的电场不连续,会在p-n二极管中引入一个新的电场峰。因此,电场在p-n二极管中的分布将变得更加均匀,击穿电压将得到提高。通过优化介电层位置、长度和宽度等器件参数,获得了最佳的击穿电压和导通电阻。数值模拟表明,在BV为10650V, Ron为5.83 mΩ-cm2的条件下,GaN CD-VGD的品质系数(VB2/Ron)为19 GW/cm2。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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