Jiangfeng Du, Zhenchao Li, Dong Liu, Zhiyuan Bai, Qi Yu
{"title":"Over 10 kV vertical GaN p-n junction diodes with high-K/low-K compound dielectric structure","authors":"Jiangfeng Du, Zhenchao Li, Dong Liu, Zhiyuan Bai, Qi Yu","doi":"10.1109/IFWS.2016.7803756","DOIUrl":null,"url":null,"abstract":"In this letter, a vertical GaN p-n junction diode with high-K/low-K compound dielectric structure (GaN CD-VGD) is proposed. The high-K/low-K compound dielectric structure consists of a layer of high dielectric constant and multilayer dielectric layers which have a lower dielectric constant, and these compound dielectric layers formed along the current flow direction. Compared with a conventional p-n diode, the edge electric field will be suppressed due to the effects of high-K passivation. And a new electric field peak will be introduced in the p-n diodes, because of a discontinuity of electrical field at the interface of high-K and low-K layer. Therefore the distribution of electric field in p-n diodes will become more uniform and an enhancement of breakdown voltage can be achieved. A best trade-off breakdown voltage (BV) and on-resistance (Ron) have been obtained by optimizing device parameters including dielectric layer situation, length and width. Numerical simulation demonstrate that GaN CD-VGD with a BV of 10650V and a Ron of 5.83 mΩ-cm2, resulting in a figure-of-merit (VB2/Ron) of 19 GW/cm2.","PeriodicalId":331453,"journal":{"name":"2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IFWS.2016.7803756","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
In this letter, a vertical GaN p-n junction diode with high-K/low-K compound dielectric structure (GaN CD-VGD) is proposed. The high-K/low-K compound dielectric structure consists of a layer of high dielectric constant and multilayer dielectric layers which have a lower dielectric constant, and these compound dielectric layers formed along the current flow direction. Compared with a conventional p-n diode, the edge electric field will be suppressed due to the effects of high-K passivation. And a new electric field peak will be introduced in the p-n diodes, because of a discontinuity of electrical field at the interface of high-K and low-K layer. Therefore the distribution of electric field in p-n diodes will become more uniform and an enhancement of breakdown voltage can be achieved. A best trade-off breakdown voltage (BV) and on-resistance (Ron) have been obtained by optimizing device parameters including dielectric layer situation, length and width. Numerical simulation demonstrate that GaN CD-VGD with a BV of 10650V and a Ron of 5.83 mΩ-cm2, resulting in a figure-of-merit (VB2/Ron) of 19 GW/cm2.