Reliability of latchup characterization procedures

Abstract

Three different well bias concepts are studied in detail under worst-case (power-on) conditions to evaluate the reliability of three distinct latchup characterization methods. An electrical method shows the most reliable results for the detection of latchup occurrence. A laser scanning method is the most reliable for localization of latchup susceptible regions. While the imaging of faint light is useful for detecting hot electrons and transistors in saturation, it is of little value for latchup observations.<>