CMOS without doping: Midgap Schottky-barrier nanowire field-effect-transistors for high-temperature applications

Abstract

In this paper we report on a newly developed nanowire based field-effect device-architecture (NWFET) that can be used in high temperature environments. Our devices posess both high temperature stability and low OFF-state current. By changes in source/drain bias-polarity the electrical properties of the NW-devices can be tuned, whether the lowest possible leakage current, or maximum output current is desirable in a specific application.