Skin effect modeling of interconnects using the Laguerre-FDTD scheme

Abstract

The Laguerre-FDTD scheme is unconditionally stable for transient electromagnetic simulation and is ideally suited for modeling multi-scale structures such as packaging and interconnects. In this work, skin effect is incorporated into Laguerre-FDTD to ensure fast simulation speed and high accuracy with less dense mesh applied. The skin effect is modeled by applying the surface impedance boundary condition (SIBC) on the interface of conductor and dielectric material. A method of transferring the time domain convolution term in SIBC formulation into Laguerre domain is proposed. Results from microstrip and TSV structures have been presented which show good calculation accuracy and efficiency of the SIBC incorporated Laguerre-FDTD method.