Intermetallic Cu3Sn as oxidation barrier for fluxless Cu-Sn bonding

H. Liu, K. Wang, K. Aasmundtveit, N. Hoivik
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引用次数: 15

Abstract

A fluxless Cu/Sn SLID bonding process was demonstrated by using intermetallic Cu3Sn layer as the oxidation barrier for Cu interconnects. Oxidation behavior of intermetallic Cu3Sn was confirmed by aging Cu and multilayer Cu/Cu3Sn films at elevated temperatures in ambient air, and measuring the oxidation level by energy dispersive x-ray microscopy (EDX). The strength of bonded interconnects were characterized by shear testing, and found to be comparable to conventionally SLID bonded interconnects. Furthermore, the interdiffusion process of elemental Cu and Sn in the bonding region is discussed.
金属间Cu3Sn作为无熔剂Cu-Sn键合的氧化屏障
采用金属间Cu3Sn层作为Cu互连层的氧化屏障,建立了无熔点Cu/Sn滑动键合工艺。通过高温时效Cu和多层Cu/Cu3Sn膜,并通过能量色散x射线显微镜(EDX)测量氧化水平,证实了金属间化合物Cu3Sn的氧化行为。通过剪切测试表征了粘结连接件的强度,发现其与常规的滑动粘结连接件相当。进一步讨论了Cu和Sn元素在键合区的相互扩散过程。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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