Non-volatile Semiconductor Memory Technology in Nanotech Era

Chih-Yuan Lu
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引用次数: 3

Abstract

Non-volatile semiconductor memory, especially Flash memory has seen explosive growth in recent years because of unceasing demand for higher performance and density for cell phone, digital still camera, camcorder, MP3, consumer electronics and automotive applications. Despite the rosy outlook, both NOR and NAND Flash technologies face steep challenges to further scale down into the sub-45nm nodes. At 45nm node both technologies confront fundamental physics limitations - the non-scalability of tunnel oxide and cross talk between floating gates. This paper examines the scaling limits for Flash memories and surveys potential solutions that promise to carry nonvolatile memories further down the Moore’s curve at 32nm node and beyond.
纳米技术时代的非易失性半导体存储技术
由于手机、数码相机、摄像机、MP3、消费电子产品和汽车应用对更高性能和密度的不断需求,非易失性半导体存储器,特别是闪存,近年来出现了爆炸式增长。尽管前景乐观,NOR和NAND闪存技术都面临着进一步缩小到45纳米以下节点的严峻挑战。在45nm节点上,这两种技术都面临着基本的物理限制——隧道氧化物的不可扩展性和浮动栅极之间的串扰。本文研究了闪存的缩放限制,并调查了可能的解决方案,这些解决方案有望使非易失性存储器在32nm节点的摩尔曲线上进一步下降。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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