A 1∼4GHz Tri-Directional RF Amplifier Based on CMOS Technology for Digital Array Radars

Abstract

This paper presents A 1 to 4 GHz tri-directional RF amplifier based on 0.18um technology for digital array radar applications. A wideband matching from 1 to 4 GHz at RF port is achieved while the circuit is working in both TX and RX mode. The circuits consist of a variable gain low noise amplifier, a drive amplifier and a single pole double throw switch. The circuit shows gain from 7.6 to 14.2 dB, and the noise figure is less than 5.3 dB with −3dBm@2.4GHz input P-1dB compression point in RX, while gain of 9.9dB and output P-1dB compression point is 11.4dBm@2.4GHz in TX. The chip size is 2.25mm*0.97mm (with pads).