A thin film multichip module for workstation applications

M. Bregman, A. Kimura, T. Matsui, H. Nishida, K. Nishiyama, H. Ohkuma, A. Tanaka, C. Kovac, D. McQueeney
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引用次数: 10

Abstract

A thin film multichip module which utilizes very high density wiring on a silicon substrate has been developed. The technology has been demonstrated using the IBM RISC (reduced instruction set computer) System/6000 processor as a vehicle. The prototype module contains a RISC processor consisting of nine CMOS VLSI chips. The package also contains decoupling capacitors and has 684 I/O. The substrate consists of a thin film structure fabricated on a silicon wafer using a polyimide dielectric and aluminum metal. All fabrication was done in an existing CMOS manufacturing line. IBM's C4 (controlled collapse chip connection) flip chip bonding technique was used to connect the CMOS VLSI chips to the package. The silicon substrate was packaged nonhermetically and connected to the next level of packaging using very high density surface mount flex cables. A clip-on heatsink was attached to the finished module, which allows for up to 30 W of power dissipation in the air flow found in a typical workstation environment.<>
用于工作站应用的薄膜多芯片模块
研制了一种在硅衬底上采用高密度布线的薄膜多芯片模块。该技术已被证明使用IBM RISC(精简指令集计算机)系统/6000处理器作为载体。原型模块包含一个由9个CMOS VLSI芯片组成的RISC处理器。该封装还包含去耦电容器,并具有684个I/O。衬底由使用聚酰亚胺电介质和铝金属在硅片上制造的薄膜结构组成。所有的制造都是在现有的CMOS生产线上完成的。IBM的C4(受控折叠芯片连接)倒装芯片键合技术用于将CMOS VLSI芯片连接到封装上。硅衬底采用非密封封装,并使用非常高密度的表面贴装柔性电缆连接到下一级封装。在完成的模块上附加了一个夹式散热器,在典型的工作站环境中,它可以在气流中消耗高达30 W的功率。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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