350 V carrier injection field effect transistor (CIFET) with very low on-resistance and high switching speed

Abstract

To realize low on-state voltage and high switching speed, a new device, a CIFET (Carrier Injection Field Effect Transistor), is proposed. The fabricated 350 V lateral CIFET has a low on-state voltage of less than 0.8 V at 100 A/cm/sup 2/, which is difficult to be achieved by IGBTs, ESTs and MCTs. Its fall time is reduced to about 0.2 /spl mu/s by electron irradiation. Early removal of the injected gate current (more than 5 /spl mu/s) before removing the MOS gate voltage shortens the fall time to about 70 ns.