Positive bias temperature instability induced positive charge generation in P+ Poly/SiON pMOSFET's

Abstract

We have investigated positive bias temperature instability characteristics in P+ Poly/SiON pMOSFET's. Similar to NBTI, PBTI also shows positive charge generation. From the LV-SILC characteristics, we observed Dit generation at both the Poly/SiON and Si/SiON interfaces after PBTI stress, with Dit generation at the Poly/SiON interface influencing trap creation at the Si/SiON interface.