Theoretical and experimental investigation of 500 V p- and n-channel VDMOS-LIGBT transistors

Abstract

Static and dynamic performance of the n-channel VDMOS-LIGBT, presented for the first time in this work, has been studied as a function of a few critical design parameters. A novel method for minimizing snap-back in this device and other similar hybrid devices is described. A unique back-injection of current out of the IGBT anode of the n-channel VDMOS-LIGBT during resistive turn-off has been observed experimentally and is elucidated using numerical simulations.