Development of Quantum Device Simulator, NEMO-VN2

Abstract

We develop some versions of quantum devices simulators such as NEMO-VN, NEMO-VN1 and NEMO-VN2. The quantum device simulator – NEMO-VN2 focuses on carbon nanotube FET (CNTFET). CNTFETs have been studied in recent years as potential alternatives to CMOS devices because of their compelling properties. Studies of phonon scattering in CNTs and its influence in CNTFET have focused on metallic tubes or on long semiconducting tubes. Phonon scattering in short channel CNTFETs, which is important for nanoelectronic applications, remains unexplored. In this work the non-equilibrium Green function (NEGF) is used to perform a comprehensive study of CNT transistors. The program has been written by using graphic user interface (GUI) of Matlab. We find that the effect of scattering on current-voltage characteristics of CNTFET is significant. The degradation of drain current due to scattering has been observed. Some typical simulation results have been presented for illustration.