Local floating body effect in body-grounded SOI nMOSFETs

Abstract

Summary form only given. In this paper, the width dependence of the kink effect and the low frequency noise overshoot in the body grounded H-gate SOI MOSFETs have been studied. These phenomena are related to the local floating body effects resulting from the intrinsic body impedance. Also, it is suggested that the unique low frequency noise overshoot in SOI can be a sensitive tool to evaluate the efficiency of the body contact.