Fabrication of GaN/SiC/diamond structure for efficient thermal management of power device

Abstract

The self-heating of GaN-HEMTs is a serious issue in terms of the device performance and reliability. Therefore, diamond is the most promising candidate as a heat spreader material for HEMTs application because of its extremely high thermal conductivity. Therefore, we fabricate GaN-HEMTs on diamond substrate by using surface activated bonding method.