Novel seed layer formation using direct electroless copper deposition on ALD-Ru layer for high aspect ratio TSV

2012 IEEE International Interconnect Technology Conference Pub Date : 2012-06-04 DOI:10.1109/IITC.2012.6251660

F. Inoue, H. Philipsen, A. Radisic, S. Armini, Y. Civale, P. Leunissen, S. Shingubara

引用次数: 6

Abstract

High aspect ratio through-Si vias (2 μmφ, AR 15) have been filled without voids on coupon scale by using an electroless deposited Cu seed layer on ALD-Ru. The total Cu overburden, which is ELD and filling Cu, was about 700 nm. In addition, the electroless Cu bath showed good stability during 2 hours with controlling pH to stabilize the deposition process. These results show the feasibility of electroless deposition in TSV processing.

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采用直接化学镀铜在ALD-Ru层上制备高纵横比TSV的新型种层

利用化学沉积的Cu种子层在ALD-Ru表面制备了高纵横比(2 μmφ， ar15)的si通孔，在片状尺度上无空隙填充。Cu覆盖层总厚度约为700 nm，主要为ELD和填充Cu。另外，在控制pH稳定沉积过程的条件下，化学镀铜液在2小时内表现出良好的稳定性。这些结果表明化学沉积在TSV加工中的可行性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2012 IEEE International Interconnect Technology Conference

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